TPH3212PS
detaildesc

TPH3212PS

Transphorm

Produkt-Nr.:

TPH3212PS

Hersteller:

Transphorm

Paket:

TO-220AB

Charge:

-

Datenblatt:

-

Beschreibung:

GANFET N-CH 650V 27A TO220AB

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 8 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 72mOhm @ 17A, 8V
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 2.6V @ 400uA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 104W (Tc)
Package / Case TO-220-3
Technology GaNFET (Cascode Gallium Nitride FET)
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Mfr Transphorm
Vgs (Max) ±18V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TPH3212