TPH3206LDB
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TPH3206LDB

Transphorm

Produkt-Nr.:

TPH3206LDB

Hersteller:

Transphorm

Paket:

PQFN (8x8)

Charge:

-

Datenblatt:

pdf

Beschreibung:

GANFET N-CH 650V 16A PQFN

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 480 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 8V
Supplier Device Package PQFN (8x8)
Vgs(th) (Max) @ Id 2.6V @ 500µA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 81W (Tc)
Package / Case 4-PowerDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Transphorm
Vgs (Max) ±18V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube