TP65H480G4JSG
Transphorm
Produkt-Nr.:
TP65H480G4JSG
Hersteller:
Paket:
2-PQFN (5x6)
Charge:
-
Datenblatt:
-
Beschreibung:
MOSFET 650V, 480mOhm
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 8 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.4A, 8V |
| Supplier Device Package | 2-PQFN (5x6) |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | SuperGaN® |
| Power Dissipation (Max) | 13.2W (Tc) |
| Package / Case | 2-PowerTSFN |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Mfr | Transphorm |
| Vgs (Max) | ±18V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Package | Bulk |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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