TP65H070LDG
Transphorm
Produkt-Nr.:
TP65H070LDG
Hersteller:
Paket:
3-PQFN (8x8)
Charge:
-
Datenblatt:
-
Beschreibung:
GANFET N-CH 650V 25A 3PQFN
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| Supplier Device Package | 3-PQFN (8x8) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | TP65H070L |
| Power Dissipation (Max) | 96W (Tc) |
| Package / Case | 3-PowerDFN |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Mfr | Transphorm |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | TP65H070 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
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2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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