TP0202K-T1-E3
detaildesc

TP0202K-T1-E3

Vishay Siliconix

Produkt-Nr.:

TP0202K-T1-E3

Hersteller:

Vishay Siliconix

Paket:

SOT-23-3 (TO-236)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 30V 385MA SOT23-3

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 31 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchFET®
Power Dissipation (Max) 350mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 385mA (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TP0202