2N6661JTXV02
detaildesc

2N6661JTXV02

Vishay Siliconix

Produkt-Nr.:

2N6661JTXV02

Hersteller:

Vishay Siliconix

Paket:

TO-39

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 90V 860MA TO39

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Type N-Channel
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Supplier Device Package TO-39
Vgs(th) (Max) @ Id 2V @ 1mA
Drain to Source Voltage (Vdss) 90 V
Series -
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Package / Case TO-205AD, TO-39-3 Metal Can
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 860mA (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tube
Base Product Number 2N6661