2N7002-E3
detaildesc

2N7002-E3

Vishay Siliconix

Produkt-Nr.:

2N7002-E3

Hersteller:

Vishay Siliconix

Paket:

TO-236

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 60V 115MA TO236

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Type N-Channel
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Supplier Device Package TO-236
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 200mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tape & Reel (TR)
Base Product Number 2N7002