2N7002E
detaildesc

2N7002E

Vishay Siliconix

Produkt-Nr.:

2N7002E

Hersteller:

Vishay Siliconix

Paket:

SOT-23-3 (TO-236)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 60V 240MA SOT23-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 5 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 350mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 340mA
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk
Base Product Number 2N7002