SUP50N10-21P-GE3
Vishay Siliconix
Produkt-Nr.:
SUP50N10-21P-GE3
Hersteller:
Paket:
TO-220AB
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 100V 50A TO220AB
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2055 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| Supplier Device Package | TO-220AB |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tube |
| Base Product Number | SUP50 |
SUP50N10-21P-GE3 Verwandte Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 2
Grundkenntnisse in Kristalloszillatoren, Schaltungsdesign, Ursachen für Vibrationsausfall, Schaltungsprinzipien, Kristallfrequenz und Anwendungen digitaler Schaltungen (Download von Kristalloszillatordaten)
2024-04-08 2
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 4
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 2
2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
Schnelle Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号