SQS160ELNW-T1_GE3
detaildesc

SQS160ELNW-T1_GE3

Vishay Siliconix

Produkt-Nr.:

SQS160ELNW-T1_GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® 1212-8SLW

Charge:

-

Datenblatt:

pdf

Beschreibung:

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3866 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount, Wettable Flank
Product Status Active
Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V
Supplier Device Package PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series Automotive, AEC-Q101, TrenchFET® Gen IV
Power Dissipation (Max) 113W (Tc)
Package / Case PowerPAK® 1212-8SLW
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 141A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQS160