SIR681DP-T1-RE3
Vishay Siliconix
Produkt-Nr.:
SIR681DP-T1-RE3
Hersteller:
Paket:
PowerPAK® SO-8
Charge:
-
Datenblatt:
Beschreibung:
MOSFET P-CH 80V 17.6A/71.9A PPAK
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 40 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 10A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Drain to Source Voltage (Vdss) | 80 V |
| Series | TrenchFET® Gen IV |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 17.6A (Ta), 71.9A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Package | Tape & Reel (TR) |
| Base Product Number | SIR681 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
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2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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