SIHK185N60EF-T1GE3
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SIHK185N60EF-T1GE3

Vishay Siliconix

Produkt-Nr.:

SIHK185N60EF-T1GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK®10 x 12

Charge:

-

Datenblatt:

pdf

Beschreibung:

EF SERIES POWER MOSFET WITH FAST

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 193mOhm @ 9.5A, 10V
Supplier Device Package PowerPAK®10 x 12
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series EF
Power Dissipation (Max) 114W (Tc)
Package / Case 8-PowerBSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)