SIHD6N62ET1-GE3
Vishay Siliconix
Produkt-Nr.:
SIHD6N62ET1-GE3
Hersteller:
Paket:
TO-252AA
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 620V 6A TO252AA
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 578 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3A, 10V |
| Supplier Device Package | TO-252AA |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 620 V |
| Series | E |
| Power Dissipation (Max) | 78W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SIHD6 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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