SIDR608EP-T1-RE3
Vishay Siliconix
Produkt-Nr.:
SIDR608EP-T1-RE3
Hersteller:
Paket:
PowerPAK® SO-8DC
Charge:
-
Datenblatt:
Beschreibung:
N-CHANNEL 45 V (D-S) 175C MOSFET
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 20A, 10V |
| Supplier Device Package | PowerPAK® SO-8DC |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Drain to Source Voltage (Vdss) | 45 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 7.5W (Ta), 125W (Tc) |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta), 228A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | +20V, -16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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