Vishay Siliconix
Produkt-Nr.:
SIDR392DP-T1-RE3
Hersteller:
Paket:
PowerPAK® SO-8DC
Charge:
-
Beschreibung:
N-CHANNEL 30-V (D-S) MOSFET
Menge:
Lieferung:
Zahlung:
Minimum: 1 Vielfache: 1
Menge
Stückpreis
Ext-Preis
1
$2.755
$2.755
10
$2.31515
$23.1515
100
$1.87321
$187.321
500
$1.665084
$832.542
1000
$1.425722
$1425.722
Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 9530 pF @ 15 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 10 V |
Mounting Type | Surface Mount |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 0.62mOhm @ 20A, 10V |
Supplier Device Package | PowerPAK® SO-8DC |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Drain to Source Voltage (Vdss) | 30 V |
Series | TrenchFET® Gen IV |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
Package / Case | PowerPAK® SO-8 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 82A (Ta), 100A (Tc) |
Mfr | Vishay Siliconix |
Vgs (Max) | +20V, -16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |