SIB800EDK-T1-GE3
detaildesc

SIB800EDK-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SIB800EDK-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® SC-75-6

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 20V 1.5A PPAK SC75-6

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 225mOhm @ 1.6A, 4.5V
Supplier Device Package PowerPAK® SC-75-6
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series LITTLE FOOT®
Power Dissipation (Max) 1.1W (Ta), 3.1W (Tc)
Package / Case PowerPAK® SC-75-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±6V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SIB800