SIB419DK-T1-GE3
Vishay Siliconix
Produkt-Nr.:
SIB419DK-T1-GE3
Hersteller:
Paket:
PowerPAK® SC-75-6
Charge:
-
Datenblatt:
Beschreibung:
MOSFET P-CH 12V 9A PPAK SC75-6
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 562 pF @ 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.82 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.2A, 4.5V |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain to Source Voltage (Vdss) | 12 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 2.45W (Ta), 13.1W (Tc) |
| Package / Case | PowerPAK® SC-75-6 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SIB419 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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