SIA814DJ-T1-GE3
detaildesc

SIA814DJ-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SIA814DJ-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® SC-70-6 Dual

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 4.5A PPAK SC70-6

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 61mOhm @ 3.3A, 10V
Supplier Device Package PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series LITTLE FOOT®
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Package / Case PowerPAK® SC-70-6 Dual
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIA814