SIA462DJ-T4-GE3
detaildesc

SIA462DJ-T4-GE3

Vishay Siliconix

Produkt-Nr.:

SIA462DJ-T4-GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® SC-70-6

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 12A/12A PPAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V
Supplier Device Package PowerPAK® SC-70-6
Vgs(th) (Max) @ Id 2.4V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchFET®
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Package / Case PowerPAK® SC-70-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 12A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIA462