SIA112LDJ-T1-GE3
Vishay Siliconix
Produkt-Nr.:
SIA112LDJ-T1-GE3
Hersteller:
Paket:
PowerPAK® SC-70-6
Charge:
-
Datenblatt:
Beschreibung:
N-CHANNEL 100-V (D-S) MOSFET POW
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 10V |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 2.9W (Ta), 15.6W (Tc) |
| Package / Case | PowerPAK® SC-70-6 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 8.8A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±25V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SIA112 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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