SI8851EDB-T2-E1
Vishay Siliconix
Produkt-Nr.:
SI8851EDB-T2-E1
Hersteller:
Paket:
Power Micro Foot® (2.4x2)
Charge:
-
Datenblatt:
Beschreibung:
MOSFET P-CH 20V PWR MICRO FOOT
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 8 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 7A, 4.5V |
| Supplier Device Package | Power Micro Foot® (2.4x2) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain to Source Voltage (Vdss) | 20 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 660mW (Ta) |
| Package / Case | 30-XFBGA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI8851 |
SI8851EDB-T2-E1 Verwandte Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 2
Grundkenntnisse in Kristalloszillatoren, Schaltungsdesign, Ursachen für Vibrationsausfall, Schaltungsprinzipien, Kristallfrequenz und Anwendungen digitaler Schaltungen (Download von Kristalloszillatordaten)
2024-04-08 2
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 4
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 2
2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
Schnelle Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号