SI8497DB-T2-E1
Vishay Siliconix
Produkt-Nr.:
SI8497DB-T2-E1
Hersteller:
Paket:
6-microfoot
Charge:
-
Datenblatt:
Beschreibung:
MOSFET P-CH 30V 13A 6MICROFOOT
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 15 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 1.5A, 4.5V |
| Supplier Device Package | 6-microfoot |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 2.77W (Ta), 13W (Tc) |
| Package / Case | 6-UFBGA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI8497 |
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