SI8451DB-T2-E1
detaildesc

SI8451DB-T2-E1

Vishay Siliconix

Produkt-Nr.:

SI8451DB-T2-E1

Hersteller:

Vishay Siliconix

Paket:

6-Micro Foot™ (1.5x1)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V 10.8A 6MICROFOOT

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 8 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 4.5V
Supplier Device Package 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET®
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Package / Case 6-UFBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8451