SI6465DQ-T1-E3
detaildesc

SI6465DQ-T1-E3

Vishay Siliconix

Produkt-Nr.:

SI6465DQ-T1-E3

Hersteller:

Vishay Siliconix

Paket:

8-TSSOP

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 8V 8.8A 8TSSOP

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 4.5V
Supplier Device Package 8-TSSOP
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Drain to Source Voltage (Vdss) 8 V
Series TrenchFET®
Power Dissipation (Max) 1.5W (Ta)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI6465