SI4860DY-T1-E3
Vishay Siliconix
Produkt-Nr.:
SI4860DY-T1-E3
Hersteller:
Paket:
8-SOIC
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 30V 11A 8SO
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 16A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 1.6W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4860 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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