SI3879DV-T1-GE3
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SI3879DV-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SI3879DV-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

6-TSOP

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V 5A 6TSOP

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 70mOhm @ 3.5A, 4.5V
Supplier Device Package 6-TSOP
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series LITTLE FOOT®
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI3879