SI3460DDV-T1-BE3
detaildesc

SI3460DDV-T1-BE3

Vishay Siliconix

Produkt-Nr.:

SI3460DDV-T1-BE3

Hersteller:

Vishay Siliconix

Paket:

6-TSOP

Charge:

-

Datenblatt:

pdf

Beschreibung:

N-CHANNEL 20-V (D-S) MOSFET

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 8 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 28mOhm @ 5.1A, 4.5V
Supplier Device Package 6-TSOP
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta), 7.9A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)