SI2306BDS-T1-GE3
Vishay Siliconix
Produkt-Nr.:
SI2306BDS-T1-GE3
Hersteller:
Paket:
SOT-23-3 (TO-236)
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 30V 3.16A SOT23-3
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
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Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 3.5A, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 750mW (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3.16A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI2306 |
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15,000 ㎡Lager auf Lager
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