IRLD024
detaildesc

IRLD024

Vishay Siliconix

Produkt-Nr.:

IRLD024

Hersteller:

Vishay Siliconix

Paket:

4-HVMDIP

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 60V 2.5A 4DIP

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 5V
Supplier Device Package 4-HVMDIP
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 1.3W (Ta)
Package / Case 4-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Package Tube
Base Product Number IRLD024