IRFR1N60A
detaildesc

IRFR1N60A

Vishay Siliconix

Produkt-Nr.:

IRFR1N60A

Hersteller:

Vishay Siliconix

Paket:

D-Pak

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 600V 1.4A DPAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 229 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 7Ohm @ 840mA, 10V
Supplier Device Package D-Pak
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 36W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFR1