IRFBC30SPBF
detaildesc

IRFBC30SPBF

Vishay Siliconix

Produkt-Nr.:

IRFBC30SPBF

Hersteller:

Vishay Siliconix

Paket:

D²PAK (TO-263)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 600V 3.6A D2PAK

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Supplier Device Package D²PAK (TO-263)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFBC30