IRF9Z20
detaildesc

IRF9Z20

Vishay Siliconix

Produkt-Nr.:

IRF9Z20

Hersteller:

Vishay Siliconix

Paket:

TO-220AB

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 50V 9.7A TO220AB

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 280mOhm @ 5.6A, 10V
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 50 V
Series -
Power Dissipation (Max) 40W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRF9