GT50J121(Q)
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GT50J121(Q)

Toshiba Semiconductor and Storage

Produkt-Nr.:

GT50J121(Q)

Paket:

TO-3P(LH)

Charge:

-

Datenblatt:

-

Beschreibung:

IGBT 600V 50A 240W TO3P LH

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
Input Type Standard
Test Condition 300V, 50A, 13Ohm, 15V
Switching Energy 1.3mJ (on), 1.34mJ (off)
Current - Collector (Ic) (Max) 50 A
Mounting Type Through Hole
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C 90ns/300ns
Supplier Device Package TO-3P(LH)
Current - Collector Pulsed (Icm) 100 A
Series -
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Package / Case TO-3PL
Power - Max 240 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -
Base Product Number GT50J121