GT20J341,S4X(S
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GT20J341,S4X(S

Toshiba Semiconductor and Storage

Produkt-Nr.:

GT20J341,S4X(S

Paket:

TO-220SIS

Charge:

-

Datenblatt:

-

Beschreibung:

DISCRETE IGBT TRANSISTOR TO-220S

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 6

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.919

    $1.919

  • 10

    $1.59125

    $15.9125

  • 100

    $1.26673

    $126.673

  • 500

    $1.071809

    $535.9045

  • 1000

    $0.909416

    $909.416

  • 2000

    $0.863949

    $1727.898

  • 5000

    $0.831468

    $4157.34

  • 10000

    $0.803938

    $8039.38

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
Input Type Standard
Test Condition 300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Switching Energy 500µJ (on), 400µJ (off)
Current - Collector (Ic) (Max) 20 A
Mounting Type Through Hole
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C 60ns/240ns
Supplier Device Package TO-220SIS
Current - Collector Pulsed (Icm) 80 A
Series -
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Package / Case TO-220-3 Full Pack
Power - Max 45 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -