TSM060N03PQ33 RGG

Taiwan Semiconductor Corporation

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TSM060N03PQ33 RGG

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8-PDFN (3.1x3.1)

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Description:

MOSFET N-CH 30V 62A 8PDFN

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En stock : 2395

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1342 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	6mOhm @ 15A, 10V
Supplier Device Package	8-PDFN (3.1x3.1)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM060