TSM100N06CZ C0G

Taiwan Semiconductor Corporation

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TSM100N06CZ C0G

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Forfait:

TO-220

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Description:

MOSFET N-CHANNEL 60V 100A TO220

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En stock : 49

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4382 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	6.7mOhm @ 30A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	167W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM100