TQM032NH04CR RLG

Taiwan Semiconductor Corporation

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TQM032NH04CR RLG

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Forfait:

8-PDFNU (4.9x5.75)

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Description:

40V, 81A, SINGLE N-CHANNEL POWER

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En stock : 5000

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4344 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67.5 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	3.2mOhm @ 40A, 10V
Supplier Device Package	8-PDFNU (4.9x5.75)
Vgs(th) (Max) @ Id	3.6V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, AEC-Q101, PerFET™
Power Dissipation (Max)	115W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 81A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)