XP50AN1K5I
detaildesc

XP50AN1K5I

XSemi Corporation

Produkt-Nr.:

XP50AN1K5I

Hersteller:

XSemi Corporation

Paket:

TO-220CFM

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 600V 10A TO-220CFMNL

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24.6 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 1.55Ohm @ 2.5A, 10V
Supplier Device Package TO-220CFM
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 500 V
Series XP50AN1K5
Power Dissipation (Max) 1.92W (Ta), 31.3W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Mfr XSemi Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube