XP10TN135K
detaildesc

XP10TN135K

XSemi Corporation

Produkt-Nr.:

XP10TN135K

Hersteller:

XSemi Corporation

Paket:

SOT-223

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 100V 2.1A SOT-23

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 135mOhm @ 3A, 10V
Supplier Device Package SOT-223
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series XP10TN135
Power Dissipation (Max) 2.78W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Mfr XSemi Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)