XP3N5R0M
detaildesc

XP3N5R0M

XSemi Corporation

Produkt-Nr.:

XP3N5R0M

Hersteller:

XSemi Corporation

Paket:

8-SO

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 30V 38.5A TO-252

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3040 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 33.6 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 5mOhm @ 16A, 10V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series XP3N5R0
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.4A (Ta)
Mfr XSemi Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Tape & Reel (TR)