TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage
Produkt-Nr.:
TPC8207(TE12L,Q)
Hersteller:
Paket:
8-SOP (5.5x6.0)
Charge:
-
Datenblatt:
Beschreibung:
MOSFET 2N-CH 20V 6A 8-SOP
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 2010pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4.8A, 4V |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Drain to Source Voltage (Vdss) | 20V |
| Series | - |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tape & Reel (TR) |
| Base Product Number | TPC8207 |
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15,000 ㎡Lager auf Lager
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