
Toshiba Semiconductor and Storage
Produkt-Nr.:
SSM6L35FE,LM
Hersteller:
Paket:
ES6
Charge:
-
Datenblatt:
-
Beschreibung:
MOSFET N/P-CH 20V 0.18A/0.1A ES6
Menge:
Lieferung:

Zahlung:
Minimum: 1 Vielfache: 1
Menge
Stückpreis
Ext-Preis
1
$0.3705
$0.3705
10
$0.27645
$2.7645
100
$0.156465
$15.6465
500
$0.103626
$51.813
1000
$0.079448
$79.448
2000
$0.069084
$138.168
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| Operating Temperature | 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
| Supplier Device Package | ES6 |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain to Source Voltage (Vdss) | 20V |
| Series | - |
| Package / Case | SOT-563, SOT-666 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150mW |
| Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tape & Reel (TR) |
| Base Product Number | SSM6L35 |