SSM6L35FE,LM
detaildesc

SSM6L35FE,LM

Toshiba Semiconductor and Storage

Produkt-Nr.:

SSM6L35FE,LM

Paket:

ES6

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N/P-CH 20V 0.18A/0.1A ES6

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 27635

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.3705

    $0.3705

  • 10

    $0.27645

    $2.7645

  • 100

    $0.156465

    $15.6465

  • 500

    $0.103626

    $51.813

  • 1000

    $0.079448

    $79.448

  • 2000

    $0.069084

    $138.168

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Supplier Device Package ES6
Vgs(th) (Max) @ Id 1V @ 1mA
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Power - Max 150mW
Current - Continuous Drain (Id) @ 25°C 180mA, 100mA
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Base Product Number SSM6L35