SCT3080KLGC11
Rohm Semiconductor
Produkt-Nr.:
SCT3080KLGC11
Hersteller:
Paket:
TO-247N
Charge:
-
Datenblatt:
Beschreibung:
SICFET N-CH 1200V 31A TO247N
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | - |
| Power Dissipation (Max) | 165W (Tc) |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | +22V, -4V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
| Base Product Number | SCT3080 |
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