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ES6U3T2CR
Rohm Semiconductor
Produkt-Nr.:
ES6U3T2CR
Hersteller:
Paket:
6-WEMT
Charge:
-
Datenblatt:
-
Beschreibung:
MOSFET N-CH 30V 1.4A WEMT6
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.4A, 10V |
| Supplier Device Package | 6-WEMT |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Package / Case | 6-SMD, Flat Leads |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Package | Tape & Reel (TR) |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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