QS5U16TR
detaildesc

QS5U16TR

Rohm Semiconductor

Produkt-Nr.:

QS5U16TR

Hersteller:

Rohm Semiconductor

Paket:

TSMT5

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 2A TSMT5

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V
Supplier Device Package TSMT5
Vgs(th) (Max) @ Id 1.5V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 900mW (Ta)
Package / Case SOT-23-5 Thin, TSOT-23-5
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number QS5U16