SCT2450KEHRC11
detaildesc

SCT2450KEHRC11

Rohm Semiconductor

Produkt-Nr.:

SCT2450KEHRC11

Hersteller:

Rohm Semiconductor

Paket:

TO-247N

Charge:

-

Datenblatt:

pdf

Beschreibung:

1200V, 10A, THD, SILICON-CARBIDE

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 463 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 18 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 585mOhm @ 3A, 18V
Supplier Device Package TO-247N
Vgs(th) (Max) @ Id 4V @ 900µA
Drain to Source Voltage (Vdss) 1200 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 85W (Tc)
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT2450