Rohm Semiconductor
Produkt-Nr.:
RS1E350BNTB1
Hersteller:
Paket:
8-HSOP
Charge:
-
Beschreibung:
NCH 30V 80A POWER MOSFET: RS1E35
Menge:
Lieferung:
Zahlung:
Minimum: 1 Vielfache: 1
Menge
Stückpreis
Ext-Preis
1
$2.9165
$2.9165
10
$2.0634
$20.634
100
$1.689955
$168.9955
500
$1.424658
$712.329
1000
$1.306763
$1306.763
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Operating Temperature | 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 15 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
Mounting Type | Surface Mount |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 35A, 10V |
Supplier Device Package | 8-HSOP |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Drain to Source Voltage (Vdss) | 30 V |
Series | - |
Power Dissipation (Max) | 3W (Ta), 35W (Tc) |
Package / Case | 8-PowerTDFN |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 80A (Tc) |
Mfr | Rohm Semiconductor |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | RS1E |