RS1E240BNTB
detaildesc

RS1E240BNTB

Rohm Semiconductor

Produkt-Nr.:

RS1E240BNTB

Hersteller:

Rohm Semiconductor

Paket:

8-HSOP

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 24A 8HSOP

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 3.2mOhm @ 24A, 10V
Supplier Device Package 8-HSOP
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 3W (Ta), 30W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RS1E