RDX100N60FU6
Rohm Semiconductor
Produkt-Nr.:
RDX100N60FU6
Hersteller:
Paket:
TO-220FM
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 600V 10A TO220FM
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5A, 10V |
| Supplier Device Package | TO-220FM |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Series | - |
| Power Dissipation (Max) | 45W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
| Base Product Number | RDX100 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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