RCJ081N20TL
Rohm Semiconductor
Produkt-Nr.:
RCJ081N20TL
Hersteller:
Paket:
LPTS
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 200V 8A LPTS
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 770mOhm @ 4A, 10V |
| Supplier Device Package | LPTS |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Series | - |
| Power Dissipation (Max) | 1.56W (Ta), 40W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | RCJ081 |
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30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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